UG3SC120009K4S
1200 V, 7.6 mOhm Combo-FET, SiC JFET w/ Si MOSFET
Key Features
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Single digit RDS(on)
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Normally-off capability
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Improved speed control
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Improved parallel device operation (3+ FETs)
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Operating temperature: 175C (max)
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High pulse current capability
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Excellent device robustness
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Silver-sintered die attach for excellent thermal resistance
Qorvo's UG3SC120009K4S "Combo-FET" integrates both a 1200V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET. These benefits include ultra-low on-resistance (RDS(on)) to minimize conduction losses and the exceptional robustness characteristic of a simplified JFET device structure, making it capable of handling the high-energy switching required in circuit protection applications.
For switch-mode power conversion application, this device provides separate access to the JFET and MOSFET gates for improved speed control and ease of paralleling multiple devices.
Typical Applications
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Solid State / Semiconductor Circuit Breaker
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Solid State / Semiconductor Relay
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Battery Disconnects
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Surge Protection
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Inrush Current Control
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High power switch mode converters (>25kW)
Product Categories
Application Categories
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 9 |
| ID Peak(A) | 550 |
| Generation | Gen 3 |
| Tj Max(°C) | 175 |
| Automotive Qualification | Yes |
| Package Type | TO-247-4L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |