Products Power Solutions

    SiC Modules

    Qorvo's portfolio of highly integrated silicon carbide (SiC) power modules feature multiple 1200V FETs in easy-to-use E1B packaging. These FETs leverage Qorvo's unique cascode configuration where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET, thereby reducing RDS(on), switching loss, and thermal resistance, while maximizing efficiency.

    Key Features

    • 1200V half bridge and full bridge options
    • Low RDS(on) ranging from 9-70 mohms
    • Easy to use E1B packaging
    • High-performance cascode configuration
    • Silver sinter die attach reduces thermal resistance

    Typical Applications

    • EV charging stations
    • Solar applications
    • Energy storage
    • Industrial power supplies

    Contact Qorvo Power for quotes, samples and more.

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    See how Qorvo's new SiC modules in E1B packaging maximize efficiency and thermal performance.

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    Discover the power of Qorvo SiC FETs in ZVS soft-switching applications in this webinar originally shown at PowerUp Asia.

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    Quickly evaluate and identify the optimal SiC device for your power topology

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    Important FET design considerations and RC snubber recommendations

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