SiC JFETs and Combo-FETs
Qorvo's silicon carbide (SiC) JFETs are high-performance, normally-on JFET transistors with VDS-max ranging from 650 V to 1700 V. These SiC JFETs feature ultra-low on-resistance (RDS(on)) starting at just 4 mΩ, while low gate charge (QG) allows for further reductions in both conduction and switching losses.
The SiC Combo-FET is a revolutionary device that combines this low RDS(on) Qorvo SiC JFET with a Si MOSFET in a single, compact package. Designed specifically for low frequency protection applications, such as solid-state circuit breakers, battery disconnects, and surge protection, these Combo-FETs allow users access to the JFET gate to optimize the design. The integration of the Si MOSFET ensures a normally-off solution, achieving a size reduction of over 25% compared to discrete implementations.
The superior thermal performance, small size, and robustness of both the SiC JFET and SiC Combo-FET make them ideal choices to address the challenges facing designers of circuit protection systems.
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Introducing Qorvo’s 4mΩ SiC JFET
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Revolutionizing Circuit Protection with SiC JFETs
The ultra-low RDS(on) and robustness of a JFET paired with the high-voltage capability of silicon carbide – the formidable combination catalyzing semiconductor circuit-breaker development.
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