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    SiC Diodes

    Silicon carbide (SiC) diodes are high-performance Merged-PiN-Schottky (MPS) diodes with excellent IFSM (surge) ratings. With zero reverse recovery charge and 175°C maximum junction temperature, these 650 V, 1200 V and 1700 V Schottky diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.

    Key Features

    • Excellent IFSM (surge) rating of any supplier
    • High thermal resistance
    • Ag sintered bonding
    • Best in class VF*Qc figure of merit
    • High current ratings: 25 A / 1700 V, 100 A / 1200 V, 200 A / 650 V
    • No reverse or forward recovery
    • AEC-Q101 qualified

    Typical Applications

    • Power converters
    • Industrial motor drives
    • Switched-mode power supplies
    • Power factor correction modules

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    Silicon Carbide Product Support

    This product line is no longer associated with Qorvo. This product line was acquired by another company as of January 14, 2025. For further assistance, see the press release and contact the new owner of this business.
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