Products Discrete Transistors

    SiC FETs

    Qorvo's high-performance silicon carbide (SiC) FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and surface mount packages, with excellent cost effectiveness. These FETs are based on a unique cascode configuration where a high-performance SiC fast JFET is co-packaged with a cascode optimized Si-MOSFET, enabling standard gate drive SiC device operation. The majority of these devices are AEC-Q101 qualified.

    Key Features

    • 650 / 750 / 1200 / 1700 V device options
    • Industry's lowest RDS(on) options from 6 to 410 mohms
    • New Gen 4 750 V and 1200 V SiC FETs
    • High-performance cascode configuration
    • Excellent body diode performance (Vf < 2V)
    • Drive with any Si and/or SiC gate drive voltage
    • TO-220-3L; TO-247-3L & 4L; D2PAK-3L & 7L packages
    • Majority are AEC-Q101 qualified

    Typical Applications

    • Electric vehicle (EV) charging
    • Photovoltaic (PV) inverters
    • Switched-mode power supplies
    • Industrial power supplies
    • Telecom and server power
    • Power factor correction modules
    • Motor drives
    • Induction heating

    Quickly evaluate and identify the optimal SiC device for your power topology

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    Important FET design considerations and RC snubber recommendations

    Read Before Designing

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