UG4SC075009K4S
750 V, 8.4 mohm Combo-FET, SiC JFET w/ Si MOSFET
Key Features
- Single digit RDS(on)
- Normally-off capability
- Improved speed control
- Improved parallel device operation (3+ FETs)
- Operating temperature: 175C (max)
- High pulse current capability
- Excellent device robustness
- Silver-sintered die attach for excellent thermal resistance
- Short circuit rated
The UG4SC075009K4S "Combo-FET" integrates both a 750V SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET. These benefits include ultra-low on-resistance (RDS(on)) to minimize conduction losses and the exceptional robustness characteristic of a simplified JFET device structure, making it capable of handling the high-energy switching required in circuit protection applications.
For switch-mode power conversion application, this device provides separate access to the JFET and MOSFET gates for improved speed control and ease of paralleling multiple devices.
Typical Applications
- Solid State / Semiconductor Circuit Breaker
- Solid State / Semiconductor Relay
- Battery Disconnects
- Surge Protection
- Inrush Current Control
- High power switch mode converters (>25kW)
Product Categories
Application Categories
| VDS Max(V) | 750 |
| RDS(on) Typ @ 25C(mohm) | 9 |
| ID Peak(A) | 344 |
| Generation | Gen 4 |
| Tj Max(°C) | 175 |
| Automotive Qualification | Yes |
| Package Type | TO-247-4L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |