UF3N120007K4S
1200 V, 7.1 mOhm Normally-On SiC JFET
Key Features
- Single digit on-resistance
- Operating temperature: 175° C (max)
- High pulse current capability
- Excellent device robustness
- Silver-sintered die attach for excellent thermal resistance
Qorvo's UF3N120007K4S is a 1200 V, 7.1 mohm high-performance Gen 3 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a standard TO-247-4L package, making it an ideal fit to address the challenging thermal constraints of solid-state circuit breakers and relay applications. Additionally, the JFET is a robust device technology capable of the high-energy switching required in circuit protection applications.
Typical Applications
- Solid State / Semiconductor Circuit Breaker
- Solid State / Semiconductor Relay
- Battery Disconnects
- Surge Protection
- Inrush Current Control
Product Categories
Application Categories
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 7.1 |
| ID Peak(A) | 550 |
| Generation | Gen 3 |
| Tj Max(°C) | 175 |
| Automotive Qualification | Yes |
| Package Type | TO-247-4L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |