Qorvo's TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation.
Bond pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4230-SCC is readily assembled using automatic equipment.
Frequency Min(MHz) | DC |
Frequency Max(MHz) | 12,000 |
Gain(dB) | 10 |
Psat(dBm) | 28.5 |
PAE(%) | 55 |
Vd(V) | 8 |
Idq(mA) | 96 |
Package Type | Die |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |