Possible replacement: UJ3C120045X
Qorvo's UJC06505K 650 V, 45 mohm RDS(on) SiC FET products co-package its xJ series high-performance SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in a TO-247-3L package, these devices are excellent for switching inductive loads, and any application requiring standard gate drive.
VDS Max(V) | 650 |
RDS(on) Typ @ 25C(mohm) | 45 |
ID Max(A) | 36.5 |
Generation | Gen 1 |
Tj Max(°C) | 150 |
Automotive Qualification | No |
Package Type | TO-247-3L |
RoHS | Yes |
Lead Free | No |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | EAR99 |