UJ3C120080K3S
1200 V, 80 mohm SiC FET
Key Features
- On-resistance RDS(on): 80 mohm (typ)
- Maximum operating temperature: 175 °C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
| Mouser | 1579 | Buy Online > | |
| RELL | 2108 | Buy Online > | |
| RFMW | 200 | Buy Online > |
Qorvo's UJ3C120080K3S 1200 V, 80 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in the TO-247-3L package, these devices are excellent for switching inductive loads, and any application requiring standard gate drive.
Typical Applications
- EV Charging
- PV Inverters
- Switched-Mode Power Supplies
- Power Factor Correction Modules
- Motor Drives
- Induction Heating
Product Categories
Application Categories
- Applications> Industrial> Pumps & Compressors
- Applications> Industrial> Robotics
- Applications> Renewables, Power & Lighting> Backup Power Systems / UPS Units
- Applications> Automotive> EV Charging
- Applications> Automotive> EV Powertrains
- Applications> Industrial> Industrial Battery Chargers
- Applications> Information Technology> Server & Telecom Power Supplies
- Applications> Renewables, Power & Lighting> Energy Storage Systems
- Applications> Renewables, Power & Lighting> AC/DC & High-Voltage DC/DC Power Supplies
- Applications> Renewables, Power & Lighting> Solar Power
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 80 |
| ID Max(A) | 33 |
| Generation | Gen 3 |
| Tj Max(°C) | 175 |
| Automotive Qualification | Yes |
| Package Type | TO-247-3L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |