UJ3N120035K3S
1200 V, 35 mohm Normally-On SiC JFET
Key Features
- On-resistance (RDS(on)): 35 mohm (typ)
- Voltage controlled
- Maximum operating temperature: 175 °C
- Extremely fast switching not dependent on temperature
- Low gate charge
- Low intrinsic capacitance
| Mouser | 1119 | Buy Online > | |
| RELL | 0 | Buy Online > | |
| RFMW | 40 | Buy Online > |
Qorvo's UJ3N120035K3S is a 1200 V, 35 mohm high-performance Gen 3 SiC normally-on JFET transistor. This device exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.
Typical Applications
- Over current protection circuits
- DC-AC inverters
- Switched-Mode Power Supplies
- Power Factor Correction Modules
- Motor Drives
- Induction Heating
Product Categories
Application Categories
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 35 |
| ID Peak(A) | 185 |
| Generation | Gen 3 |
| Tj Max(°C) | 175 |
| Automotive Qualification | Yes |
| Package Type | TO-247-3L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |