End of Life announced August 13, 2018 (PCN 18-0083).
Last Time Buy February 6, 2019.
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Qorvo's TQP770001 power amplifier (PA) is designed on Qorvo's advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness. The power amplifier is a two-stage design requiring several SMD tuning elements for input and output matching, gain shaping and bias injection. Features include an integrated bias controller with a power control (variable gain) function. The bias controller also acts to provide temperature compensation. The power amplifier is housed in a 2.0 x 2.0 mm 12-pin STSLP package with a grounded back paddle.
This power amplifier is designed to operate in Bluetooth® v2.0 class 1 systems. It is also intended to be Enhanced Data Rate (EDR) compliant with Bluetooth® v2.0 + EDR specification for both 2 Mbps and 3 Mbps modulation modes.
The Bluetooth® word mark and logos are registered trademarks owned by Bluetooth SIG, Inc. and any use of such marks by Qorvo, Inc. is under license. Other trademarks and trade names are those of their respective owners.
Package(mm) | 2.0 x 2.0 x 0.57 |
RoHS | No |
Lead Free | No |
Halogen Free | No |
ITAR Restricted | No |
ECCN | 5A991.B |