TGA2576-FL
2.5 - 6 GHz GaN HEMT Power Amplifier
Discontinued >
Please End of Life announced January 20, 2014.
Last Time Buy August 1, 2014.
Please use TGA2576-2-FL for new designs. Contact your local sales representative for assistance.
Key Features
- Frequency range: 2.5 – 6 GHz
- Psat: 45.5 dBm @ Pin = 26 dBm
- PAE: 35 %
- Small signal gain: 26 dB
- Bias: Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V typical
- Dimensions: 11.4 x 17.3 x 3.0 mm
Qorvo's TGA2576-FL is a packaged wideband power amplifier fabricated on Qorvo's production-released 0.25 um GaN on SiC process. Operating from 2.5 GHz to 6 Ghz, it achieves 45.5 dBm saturated output power, 35% PAE and 26 dB small signal gain.
Fully matched to 50 ohms and with the integrated DC blocking caps on both I/O ports, the TGA2576-FL is ideally suited to support both commercial and defense related opportunities.
Samples and evaluation boards are available.
Typical Applications
- Communication Systems
- Electronic Warfare
- Test Instrumentation
- EMC Amplifier
Product Categories
Application Categories
| Frequency Min(GHz) | 2.5 |
| Frequency Max(GHz) | 6 |
| Gain(dB) | 26 |
| PAE(%) | 35 |
| Voltage(V) | 30 |
| Current(mA) | 1,550 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
This product appears in the following application block diagrams: