SGA8543Z
50 - 3500 MHz High IP3, Medium Power Discrete SiGe HBT
End of Life announced October 20, 2015 (PCN 15-0109).
Last Time Buy May 2, 2016.
Contact your local sales representative for assistance.
Key Features
- 50MHz to3.5GHz Operation
- 1.5dB NFMN at 2.44GHz
- 15.6dB GMAX at 2.44GHz
- P1dB =+20.6dBm at 2.44GHz
- OIP3 =+34.6dBm at 2.44GHz
- Low Cost, High Performance, Versatility
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Qorvo's SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from 50MHz to 3.5GHz. The SGA8543Z is optimized for 3.3V operation but can be biased at 2.7V for low-voltage battery operated systems. The device provides low NF and excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity requirements.The matte tin finish on the lead-free "Z" package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.
Product Categories
| Frequency Min(MHz) | 50 |
| Frequency Max(MHz) | 3,500 |
| Gain(dB) | 19 |
| OP1dB(dBm) | 20 |
| OIP3(dBm) | 33.4 |
| NF(dB) | 3.1 |
| Voltage(V) | 3.3 |
| Current(mA) | 96 |
| Package Type | SOT-343 |
| ECCN | 5A991.G |
This product appears in the following application block diagrams: