QPA1022D
8.5 - 11 GHz, 4 Watt GaN Power Amplifier
Key Features
- Frequency Range: 8.5 - 11 GHz
- Power : 36.5 dBm
- PAE: 45 %
- Power Gain: 24dB (typical)
- Bias: VD = 22 V, IDQ = 180 mA, VG = -2.5 V (typical)
- Small from factor die
- Die Dimensions: 2.65 x 1.25 x 0.1 mm
Qorvo's QPA1022D is a MMIC power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 11.0 GHz, the QPA1022D provides > 4 W of saturated output power and 24 dB of large-signal gain while achieving > 40% power-added efficiency.
The QPA1022D is matched to 50Ω with integrated DC blocking capacitors at RF output and DC grounded input port. It also has a built-in power detector for system RF power checking. With a compact dimension of 2.65 x 1.25 x 0.10 mm, it can support tight lattice spacing requirements for phased array radar applications. It is also an ideal component to support test instrumentation and commercial communication systems.
For additional information on GaN thermal performance refer to the following application note and video.
Typical Applications
- Radar
- Communications
- Electronic Warfare
Product Categories
Application Categories
| Frequency Min(GHz) | 8.5 |
| Frequency Max(GHz) | 11 |
| Gain(dB) | 24 |
| PAE(%) | 45 |
| Voltage(V) | 22 |
| Current(mA) | 180 |
| Package Type | Die |
| Package(mm) | 2.65 x 1.25 x 0.1 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |