At this year's APEC Conference, Feb. 26-28 in Long Beach, California, we invited you to the Qorvo booth #1857 to connect with the best minds in the fields of silicon carbide (SiC), battery management and SPICE simulation.
Visitors experienced the advanced QSPICE® simulation tool and participated in three different 20-minute training sessions, including a Q&A with the tool's creator, Mike Engelhardt. Those who joined one of Mr. Engelhardt's scheduled training sessions at the Qorvo booth received an exclusive QSPICE t-shirt. If you were unable to attend the sessions at APEC, check the Qorvo YouTube channel in March to view.
Qorvo launched our inaugural SiC module family, featuring an innovative cascode JFET architecture. This highly efficient device family simplifies high-voltage designs and offers exceptional thermomechanical performance with an RDS(on) of less than 10mΩ.
Qorvo's intelligent battery management solutions demonstration highlighted our high-voltage capability (up to 20 series) designed to cater to a diverse array of battery pack applications.
Together we can empower innovation.
Sign up for regular updates from Qorvo Power with the button below.
QSPICE®: Level-Up on the Next Generation of SPICE Circuit Simulation Qorvo has introduced the industry’s latest and best free simulation tool, QSPICE. Mike Engelhardt, creator of the QSPICE simulator, has leveraged his experience authoring thousands of mixed-mode simulation models to develop a reliable power and analog simulation tool with unparalleled speed and accuracy, along with the ability to incorporate massive amounts of digital logic. |
Surge Current Handling Capability of SiC FETs Hear about how the surge current can withstand the breaking capability of a 1200V-2mΩ SiC FET. This session will discuss the needed device output characteristics, turn-off characteristics and thermal impedance. See an electro-thermal model which has been constructed to determine the time-current characteristics of a device. The experimental results show that the device can reliably withstand and turn off a surge current more than seven times its continuous current rating at the maximum-rated junction temperature. The excellent surge current handling capability proves that SiC FETs are excellent candidates for solid-state circuit protection applications. |
High-Frequency Soft-Switching is Hard, but SiC FETs Simplify Design Effort While conduction losses are unavoidable in any power converter, the advent of soft-switching techniques reduce power losses, enabling higher efficiency and simplifying the design effort to reach efficiency targets such as 80 Plus Titanium. The reduced switching energy loss in the FET during every cycle has enabled the use of smaller magnetic components such as inductors and transformers, resulting in higher power density. This presentation is for beginners and intermediate engineers and provides a detailed review of the concept of soft-switching with particular attention to the behavior of the power FET and what electrical parameters of the FET are most relevant for soft switching. The specific benefits brought by wide bandgap semiconductors such as Silicon Carbide versus traditional Silicon super junction MOSFETs are explained. |