SPA1118Z
810 - 960 MHz, 1 Watt Power Amplifier With Active Bias
Key Features
- High Linearity Performance
- +21dBm IS-95 Channel Power at -55dBc ACP
- +48dBm OIP3 Typical
- On-Chip Active Bias Control
- Surface-Mountable Plastic Package
Qorvo's SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850MHz band. Its high linearity makes it an ideal choice for wireless data and digital applications.
Product Categories
| Frequency Min(MHz) | 810 |
| Frequency Max(MHz) | 960 |
| Gain(dB) | 17.2 |
| OP1dB(dBm) | 29.5 |
| OIP3(dBm) | 48 |
| NF(dB) | 7.5 |
| Voltage(V) | 5 |
| Current(mA) | 310 |
| Package Type | SOIC-8 |
| ECCN | 5A991.G |
This product appears in the following application block diagrams: