End of Life announced March 2, 2021 (PCN 21-0056).
Last Time Buy: September 13, 2021
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The QPD0211 is a dual-path discrete GaN on SiC HEMT in DFN package which operates from 2.5 to 2.7 GHz. The device is a single-stage power amplifier transistor for
Doherty application. QPD0211 can deliver PAVG of 7.6 W at +48 V operation.
Lead-free and RoHS compliant.
Frequency Min(MHz) | 2,500 |
Frequency Max(MHz) | 2,700 |
Gain(dB) | 14.5 |
Psat(dBm) | 46.8 |
Drain Efficiency(%) | 55 |
Vd(V) | 48 |
Idq(mA) | 35 |
Package Type | DFN |
Package(mm) | 7.0 x 6.5 |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | 5A991G |