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RFMW | 35 | Buy Online > |
Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 4 x 3 mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant. Evaluation boards are available upon request.
Frequency Min(MHz) | DC |
Frequency Max(MHz) | 12,000 |
Gain(dB) | 11 |
Psat(dBm) | 43.4 |
PAE(%) | 45 |
Vd(V) | 32 |
Idq(mA) | 150 |
Package Type | QFN |
Package(mm) | 4 x 3 |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | 3A001.B.3.B.2 |
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
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