TGM2635-CP

    8 - 11 GHz, 100 Watt X Band GaN Power Amplifier Module

    Key Features

    • Frequency range: 8 - 11 GHz
    • Pout: 50 dBm
    • PAE: 35 %
    • Small signal gain: >26 dB
    • Return loss: > 12dB
    • Bias: VD = 28 V (pulsed), IDQ = 1300 mA, VG = -2.6 V typical
    • Pulsed VD: PW = 100 us, DC = 10 %
    • Package dimensions: 19.05 x 19.05 x 4.52 mm

    Qorvo's TGM2635-CP is a packaged X-band, high power MMIC amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. The TGM2635–CP operates from 8 - 11 GHz and provides 100 W of saturated output power with 22.5 dB of large signal gain and greater than 35 % power-added efficiency.

    The TGM2635-CP is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package with a pure Cu base for superior thermal management. Both RF ports (RF input internally DC blocked) are matched to 50 ohms allowing for simple system integration.

    The TGM26358-CP is ideally suited for both military and commercial X band radar systems and data links.

    Lead-free and RoHS compliant.

    Evaluation boards are available upon request.

    For additional information on GaN thermal performance refer to the following application note and video.

    Typical Applications

      • Data Link
      • X Band Radar
      • Repeaters / Boosters / DAS
      • EW Signal Jammer
    Frequency Min(GHz) 8
    Frequency Max(GHz) 11
    Pout(W) 100
    Gain(dB) > 26
    PAE(%) 35
    Voltage(V) 28
    Current(mA) 1,300
    Package Type Flange
    Package(mm) 19.05 x 19.05 x 4.52
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No

    This product appears in the following application block diagrams:

    • Applications > Defense & Aerospace > Electronic Warfare > EW Signal Jammer

      EW Signal Jammer

    • Applications > Defense & Aerospace > Radar > X Band Radar

      X Band Radar

    • Applications > Network Infrastructure > Wireless Infrastructure > Repeaters / Boosters / DAS

      Repeaters / Boosters / DAS