TGF2023-2-01
DC - 18 GHz, 6 Watt Discrete Power GaN on SiC HEMT
Please use TGF2933 for new designs.
Key Features
- Frequency range: DC to 18 GHz
- 38 dBm nominal Psat at 3 GHz
- 71.6% maximum PAE
- 18 dB nominal power gain at 3 GHz
- Bias: VD = 12 -32 V, IDQ = 125 mA
- Chip dimensions: 0.82 x 0.66 x 0.10 mm
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Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz.
The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.
Typical Applications
- Broadband Wireless
- Military
- Space
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 18,000 |
| Gain(dB) | 18 |
| Psat(dBm) | 38 |
| PAE(%) | 71.6 |
| Vd(V) | 12 to 32 |
| Idq(mA) | 25 to 125 |
| Package Type | Die |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.