TGF2933

DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor

Key Features

  • Frequency Range: DC - 25 GHz
  • Output Power (P3dB): 7.2 W at 10 GHz
  • Linear Gain: 15 dB typical at 10 GHz
  • Typical PAE3dB: 57% at 10 GHz
  • Typical NF at 10 GHz: 1.3 dB
  • Operating voltage: 28V
  • CW and Pulse capable
  • 0.83 x 0.55 x 0.10 die

The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.

Lead-free and ROHS compliant.

Typical Applications

    • Defense and Aerospace
    • Broadband wireless