TGF2933
DC - 25 GHz, 7 Watt, 28 V GaN RF Transistor
Key Features
- Frequency Range: DC - 25 GHz
- Output Power (P3dB): 7.2 W at 10 GHz
- Linear Gain: 15 dB typical at 10 GHz
- Typical PAE3dB: 57% at 10 GHz
- Typical NF at 10 GHz: 1.3 dB
- Operating voltage: 28V
- CW and Pulse capable
- 0.83 x 0.55 x 0.10 die
| Mouser | 5 | Buy Online > | |
| RELL | 37 | Buy Online > | |
| RFMW | 22 | Buy Online > |
The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven QGaN15 process. The device can support pulsed, CW, and linear operations.
Lead-free and ROHS compliant.
Typical Applications
- Defense and Aerospace
- Broadband wireless
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 25,000 |
| Gain(dB) | 15 |
| Psat(dBm) | 38.6 |
| PAE(%) | 57 |
| Vd(V) | 28 |
| Idq(mA) | 80 |
| Package Type | die |
| Package(mm) | 0.83 x 0.55 x 0.10 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.