QPD2120D
DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die
Key Features
- Frequency Range: DC - 20 GHz
- Typical Output Power P1dB: 31 dBm
- Typical Gain at 12 GHz: 11 dB
- Typical PAE at 12 GHz: 57%
- Typical NF at 12 GHz: 1 dB
- No Vias
- Technology: 0.25 um GaAs pHEMT
- Chip Dimensions: 0.41 x 0.54 x 0.10 mm
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Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2120D typically provides 31 dBm of output power at P1dB with gain of 11 dB and 57% power-added efficiency at 1 dB compression. This performance makes the QPD2120D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Lead-free and RoHS compliant.
Typical Applications
- Communications
- Radar
- Point-to-Point Radio
- Satellite Communications
Product Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 20,000 |
| Gain(dB) | 11 |
| OP1dB(dBm) | 31 |
| Psat(dBm) | 31 |
| NF(dB) | 1 |
| PAE(%) | 57 |
| Vd(V) | 8 |
| Idq(mA) | 194 |
| Package Type | Die |
| Package(mm) | 0.41 x 0.54 x 0.10 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |