QPD1022
DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor
Key Features
- Frequency Range: DC - 12 GHz
- Output Power (P3dB): 11.0 W at 2 GHz
- Linear Gain: 24.0 dB typical at 2 GHz
- Typical PAE3dB: 68.8 % at 2 GHz
- Operating voltage: 32V
- Low thermal resistance package
- CW and Pulse capable
- 3 x 3 mm package
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.
The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant. Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Typical Applications
- Military Radar
- Commercial Radar
- Land Mobile and Military Radio Communications
- Active Antennas
- Base Stations
- Jammers