The QPD0011J is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 3.4 to 3.6 GHz. In each path is a single-stage amplifier transistor. QPD0011J can deliver an average power of 16 W in a Doherty configuration.
Lead free and RoHS compliant.
Frequency Min(MHz) | 3,400 |
Frequency Max(MHz) | 3,600 |
Gain(dB) | 12.6 |
Psat(dBm) | 50.2 |
Drain Efficiency(%) | 58 |
Vd(V) | 48 |
Idq(mA) | 65 |
Package Type | DFN |
Package(mm) | 7.0 x 6.5 |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | EAR99 |