UJ3C120070K3S
1200 V, 70 mohm SiC FET
Key Features
- On-resistance (RDS(on)): 70 mohm (typ)
- Maximum operating temperature: 175 °C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
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Qorvo's UJ3C120070K3S 1200 V, 70 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.
Typical Applications
- EV Charging
- PV Inverters
- Switched-Mode Power Supplies
- Power Factor Correction Modules
- Motor Drives
- Induction Heating
Product Categories
Application Categories
- Applications> Industrial> Pumps & Compressors
- Applications> Industrial> Robotics
- Applications> Renewables, Power & Lighting> Backup Power Systems / UPS Units
- Applications> Automotive> EV Charging
- Applications> Automotive> EV Powertrains
- Applications> Industrial> Industrial Battery Chargers
- Applications> Information Technology> Server & Telecom Power Supplies
- Applications> Renewables, Power & Lighting> Energy Storage Systems
- Applications> Renewables, Power & Lighting> AC/DC & High-Voltage DC/DC Power Supplies
- Applications> Renewables, Power & Lighting> Solar Power
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 70 |
| ID Max(A) | 34.5 |
| Generation | Gen 3 |
| Tj Max(°C) | 175 |
| Automotive Qualification | Yes |
| Package Type | TO-247-3L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
This product appears in the following application block diagrams: