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RFMW | 800 | Buy Online > |
Qorvo's UJ3C065080B3 650 V, 80 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. Available in a D2PAK-3L package, these devices are excellent for switching inductive loads, and any application requiring standard gate drive.
VDS Max(V) | 650 |
RDS(on) Typ @ 25C(mohm) | 80 |
ID Max(A) | 25 |
Generation | Gen 3 |
Tj Max(°C) | 175 |
Automotive Qualification | Yes |
Package Type | D2PAK-3L |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | EAR99 |
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