UF4SC120030B7S

1200 V, 30 mohm SiC FET

Key Features

  • On Resistance RDS(on): 30 mohm (typ)
  • Operating temperature: 175C (max)
  • Excellent reverse recovery: Qrr = 164nC
  • Low body diode VFSD: 1.22V
  • Low gate charge: QG = 37.8nC
  • Low intrinsic capacitance
  • ESD Protected: HBM Class 2

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving D2PAK-7L package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

Typical Applications

    • EV Charging
    • PV Inverters
    • Switch mode power supplies
    • Power factor correction circuits
    • DC-DC converter circuits
    • Induction heating