UF4SC120009K4SH
1200V 9.1mΩ SiC FET
Key Features
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Low RDS(on)
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Low on-resistance
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Excellent Reverse Recovery
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Low body diode Vfsd
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Operating temperature: 175C (max)
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Low intrinsic capacitance
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HV package with 8mm D-S creepage distance
The UF4SC120009K4SH is a 1200V, 9.1mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal redesign when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-4L HV package, this device
exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Typical Applications
- EV Chargers
- PV Inverters
- Switch Mode Power Supplies
- Motor Drives
- Induction Heating
Product Categories
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 9.1 |
| ID Max(A) | 120 |
| Generation | 4 |
| Tj Max(°C) | 175 |
| Automotive Qualification | Yes |
| Package Type | TO-247-4L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |