UF4C120053B7S
1200 V, 53 mohm SiC FET
Key Features
- On Resistance RDS(on): 53 mohm (typ)
- Operating temperature: 175 C (max)
- Excellent reverse recovery: Qrr = 98 nC
- Low body diode VFSD: 1.28 V
- Low gate charge: QG = 37.8 nC
- Low intrinsic capacitance
- ESD Protected: HBM Class 2
| Mouser | 200 | Buy Online > | |
| RELL | 0 | Buy Online > | |
| RFMW | 200 | Buy Online > |
The UF4C120053B7S is a 1200V, 53 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving D2 PAK-7L package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
AEC-Q101 Qualified
Typical Applications
- EV Charging
- PV Inverters
- Switch mode power supplies
- Power factor correction circuits
- DC-DC converter circuits
- Induction heating
Product Categories
| VDS Max(V) | 1,200 |
| RDS(on) Typ @ 25C(mohm) | 53 |
| ID Max(A) | 34 |
| Generation | Gen 4 |
| Tj Max(°C) | 175 |
| Automotive Qualification | Yes |
| Package Type | D2PAK-7L |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
This product appears in the following application block diagrams: