Qorvo's UF3SC065040B7S 650 V, 42 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.
VDS Max(V) | 650 |
RDS(on) Typ @ 25C(mohm) | 42 |
ID Max(A) | 43 |
Generation | Gen 3 |
Tj Max(°C) | 175 |
Automotive Qualification | No |
Package Type | D2PAK-7L |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | EAR99 |
This product appears in the following application block diagrams: