UF3C170400B7S
1700 V, 410 mohm SiC FET
Key Features
- On-resistance RDS(on): 410 mohm (typ)
- Operating temperature: 175 °C (max)
- Excellent reverse recovery: Qrr = 70 nC
- Low body diode VFSD: 1.5 V
- Low gate charge: QG = 23.1 nC
- Low intrinsic capacitance
- ESD protected: HBM class 2 and CDM class C3
| Mouser | 278 | Buy Online > | |
| RELL | 428 | Buy Online > | |
| RFMW | 0 | Buy Online > |
Qorvo's UF3C170400B7S SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.
Typical Applications
- Switching Power Supplies
- Auxiliary Power Supplies
- Load Switches
Product Categories
Application Categories
- Applications> Industrial> Pumps & Compressors
- Applications> Industrial> Robotics
- Applications> Renewables, Power & Lighting> Backup Power Systems / UPS Units
- Applications> Automotive> EV Charging
- Applications> Automotive> EV Powertrains
- Applications> Industrial> Industrial Battery Chargers
- Applications> Information Technology> Server & Telecom Power Supplies
- Applications> Renewables, Power & Lighting> Energy Storage Systems
- Applications> Renewables, Power & Lighting> AC/DC & High-Voltage DC/DC Power Supplies
- Applications> Renewables, Power & Lighting> Solar Power
| VDS Max(V) | 1,700 |
| RDS(on) Typ @ 25C(mohm) | 410 |
| ID Max(A) | 7.6 |
| Generation | Gen 3 |
| Tj Max(°C) | 175 |
| Automotive Qualification | Yes |
| Package Type | D2PAK-7L |
| RoHS | Yes |
| Lead Free | No |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
This product appears in the following application block diagrams: