UF3C120080B7S

    1200 V, 85 mohm SiC FET

    Key Features

    • On-resistance RDS(on): 85 mohm (typ)
    • Maximum operating temperature: 175 °C
    • Excellent reverse recovery: Qrr = 140 nC
    • Low body diode VFSD: 1.5 V
    • Low gate charge: QG = 23 nC
    • Threshold voltage VG(th): 4.8 V (typ) allowing 0 to 15 V drive

    Qorvo's UF3C120080B7S 1200 V, 85 mohm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

    Typical Applications

      • Telecom and Server Power
      • Industrial Power Supplies
      • Power Factor Correction Modules
      • Motor Drives
      • Induction Heating
    VDS Max(V) 1,200
    RDS(on) Typ @ 25C(mohm) 85
    ID Max(A) 28.8
    Generation Gen 3
    Tj Max(°C) 175
    Automotive Qualification No
    Package Type D2PAK-7L
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN EAR99

    This product appears in the following application block diagrams:

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