Qorvo's UF3C065040T3S 650 V, 42 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are available in a TO-220-3L package and are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.