The UF3C065030K3S 650 V, 27 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are available in a TO-247-3L package and are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.
VDS Max(V) | 650 |
RDS(on) Typ @ 25C(mohm) | 27 |
ID Max(A) | 85 |
Generation | Gen 3 |
Tj Max(°C) | 175 |
Automotive Qualification | Yes |
Package Type | TO-247-3L |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | EAR99 |
This product appears in the following application block diagrams: