TGF3021-SM
0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor
Key Features
- Frequency range: 30 MHz-4.0 GHz
- Output power (P3dB): 36 W at 2.0 GHz
- Linear gain: 19.3 dB typical at 2.0 GHz
- Typical PAE3dB: 72.7 % at 2.0 GHz
- Operating voltage: 32 V
- Low thermal resistance package
- CW and pulse capable
- 3 x 4 mm package
Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in an industry standard 3x4mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant. Evaluation boards are available upon request.
Typical Applications
- Civilian Radar
- Jammers
- Land Mobile Radio Communications
- Military Radar
- Military Radio
- Test Instrumentation
- Wideband and Narrowband Amplifiers
Product Categories
Application Categories
| Frequency Min(MHz) | 30 |
| Frequency Max(MHz) | 4,000 |
| Gain(dB) | 19 |
| Psat(dBm) | 45 |
| PAE(%) | 73 |
| Vd(V) | 32 |
| Idq(mA) | 65 |
| Package Type | QFN |
| Package(mm) | 4 x 3 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
This product appears in the following application block diagrams: