TGF2956

DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT

Discontinued >

End of Life announced September 14, 2021 (PCN 21-0195).
Last Time Buy: March 25, 2022
Recommended replacement for new designs: TGF2023-2-10
Contact your local sales representative for assistance.

Key Features

  • Frequency range: DC - 12 GHz
  • 47.6dBm nominal Psat at 3 GHz
  • 69.7% maximum PAE at 3 GHz
  • 19.3dB nominal power gain at 3 GHz
  • Bias: Vd = 32V, Idq = 200mA
  • Chip dimensions: 0.82 x 2.88 x 0.10 mm

Qorvo's TGF2956 is a discrete 10.08 mm GaN on SiC HEMT which operates from DC-12 GHz.

The TGF2956 typically provides 47.6 dBm of saturated output power with power gain of 19.3 dB at 3 GHz. The maximum power added efficiency is 69.7 % which makes the TGF2956 appropriate for high efficiency applications.

Lead-free and RoHS compliant.

Typical Applications

    • Broadband Amplifiers
    • High Efficiency Power Amplifiers
    • Marine Radar
    • Military Communications
    • Point-to-point Communications
    • Satellite Communications (Satcom)