TGF2955

DC - 12 GHz, 40 Watt Discrete Power GaN on SiC HEMT

Discontinued >

End of Life announced March 24, 2021 (PCN 21-0070).
Last Time Buy: October 4, 2021
Recommended replacement for new designs: TGF2023-2-10
Contact your local sales representative for assistance.

Key Features

  • Frequency range: DC - 12 GHz
  • 46.4dBm nominal Psat at 3 GHz
  • 69% maximum PAE at 3 GHz
  • 19.2dB nominal power gain at 3 GHz
  • Bias: Vd = 32V, Idq = 150mA
  • Chip dimensions: 0.82 x 2.31 x 0.10 mm

Qorvo's TGF2955 is a discrete 7.56 mm GaN on SiC HEMT which operates from DC-12 GHz.

The TGF2955 typically provides 46.4 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 69.0 % which makes the TGF2955 appropriate for high efficiency applications.

Lead-free and RoHS compliant.

Typical Applications

    • Broadband Amplifiers
    • High Efficiency Power Amplifiers
    • Marine Radar
    • Military Communications
    • Point-to-point Communications
    • Satellite Communications (Satcom)