TGF2819-FL
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor
Key Features
- Frequency range: DC - 4 GHz
- Output power (P3dB)1: 257 W
- Linear gain1: 18 dB
- Typical PAE3dB1: > 67.5%
- Operating voltage: 50V
- CW and Pulse capable
Note 1: @ 3 GHz Load Pull
The Qorvo TGF2819-FL is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Typical Applications
- Military Radar
- Civilian Radar
- Professional and Military Radio Communications
- Test Instrumentation
- Wideband or Narrowband Amplifiers
- Jammers
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 4,000 |
| Gain(dB) | > 14 |
| Psat(dBm) | 51 |
| Vd(V) | 50 |
| Idq(mA) | 250 |
| Package Type | NI-360 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
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