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Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz.
The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5% which makes the TGF2023-2-10 appropriate for high efficiency applications.
The part is lead-free and RoHS compliant.
Frequency Min(MHz) | DC |
Frequency Max(MHz) | 14,000 |
Gain(dB) | 19.8 |
Psat(dBm) | 47.3 |
PAE(%) | 69.5 |
Vd(V) | 12 to 32 |
Idq(mA) | 200 to 1,000 |
Package Type | Die |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | 3A001.B.3.B.4 |
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.