TGF2023-2-10

    DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT

    Key Features

    • Frequency range: DC to 14 GHz
    • 47.4 dBm nominal Psat at 3 GHz
    • 69.5% maximum PAE
    • 19.8 dB nominal power gain
    • Bias: VD = 12 to 32 V, IDQ = 200 - 1000 mA
    • Chip dimensions: 0.82 x 2.48 x 0.10 mm

    Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz.

    The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5% which makes the TGF2023-2-10 appropriate for high efficiency applications.

    The part is lead-free and RoHS compliant.

    Typical Applications

      • Broadband Wireless
      • Military
      • Space
    Frequency Min(MHz) DC
    Frequency Max(MHz) 14,000
    Gain(dB) 19.8
    Psat(dBm) 47.3
    PAE(%) 69.5
    Vd(V) 12 to 32
    Idq(mA) 200 to 1,000
    Package Type Die
    RoHS Yes
    Lead Free Yes
    Halogen Free Yes
    ITAR Restricted No
    ECCN 3A001.B.3.B.4

    Modelithics® Qorvo GaN Library

    A Modelithics non-linear model is available for this product.

    Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.

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    Modelithics® Qorvo GaN Library Brochure

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