TGA2962
2 - 20 GHz 10 Watt GaN Amplifier
Key Features
- Frequency Range: 2 -20 GHz
- Output Power (PIN = 27 dBm): > 40 dBm
- PAE (PIN = 27 dBm): > 22 %
- Small Signal Gain: > 20 dB
- Recommended Bias: VD = 22 V, IDQ = 1680 mA
- Die Size: 3.24 mm x 3.24 mm x 0.10 mm
Qorvo's TGA2962 is a wideband power amplifier fabricated on Qorvo's QGaN15 GaN on SiC process. The TGA2962 operates from 2 to 20 GHz, providing 10 W of saturated power with 13 dB large signal gain and 22 % power-added efficiency at 22 V drain bias. RF ports are matched to 50 Ω, including integrated DC blocking capacitors and a RF choke.
This combination of wideband power, gain and efficiency provides system designers the flexibility to improve system performance while reducing size and cost. TGA2962 is ideally suited for wideband communications systems, electronic warfare, test instrumentation, and radar applications, across both military and commercial markets.
TGA2962 is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead free and RoHS compliant.
Typical Applications
- Communication Systems
- Electronic Warfare
- Radar
- Test Equipment
Product Categories
Application Categories
| Frequency Min(GHz) | 2 |
| Frequency Max(GHz) | 20 |
| Psat(dBm) | 40 |
| Gain(dB) | 20 |
| PAE(%) | 22 |
| Voltage(V) | 22 |
| Current(mA) | 1,680 |
| Package Type | Die |
| Package(mm) | 3.24 x 3.24 x 0.10 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
This product appears in the following application block diagrams: