T2G6000528-Q3
DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor
Key Features
- Frequency: DC to 6 GHz
- Linear Gain: 17 dB at 3.3 GHz
- Operating Voltage: 28 V
- Output Power (P3dB): 10 W at 3.3 GHz
- Lead-free and RoHS compliant
- Low thermal resistance package
| Mouser | 582 | Buy Online > | |
| RELL | 0 | Buy Online > | |
| RFMW | 0 | Buy Online > |
Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Typical Applications
- Cellular Infrastructure
- General Purpose RF Power
- Jammers
- Professional Radio Systems
- Radar
- Test Instrumentation
- Wideband and Narrowband Defense and Commercial Communication Systems
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 6,000 |
| Gain(dB) | 17 |
| Psat(dBm) | 40 |
| Drain Efficiency(%) | 53 |
| Vd(V) | 28 |
| Idq(mA) | 50 |
| Package Type | NI-200 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | No |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.