T1G4020036-FL
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
Key Features
- Frequency: DC - 3.5 GHz
- Output power (P3dB)1: 200W
- Linear gain1: 18.1dB
- Typical PAE3dB1: 67.6%
- Operating voltage: 50 V
- CW and Pulse capable
Note: 1: @2.8 GHz Load Pull (Half of device)
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Qorvo's T1G4020036-FL is a 2 x 200 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed and linear operations.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Typical Applications
- Civilian Radar
- Jammers
- Military Radar
- Professional and Military Radio
- Test Instrumentation
- Wideband and Narrowband Amplifiers
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 3,500 |
| Gain(dB) | 18.1 |
| Psat(dBm) | 2 x 53.0 |
| Drain Efficiency(%) | 67.6 |
| Vd(V) | 50 |
| Idq(mA) | 520 |
| Package Type | NI-650 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.3.A.3 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
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