T1G2028536-FS
DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor
Recommended replacement for new designs: QPD1425
Key Features
- Frequency: DC to 2 GHz
- Output power (P3dB): 260 W at 1.2 GHz
- Linear gain: 18 dB at 1.2 GHz
- Operating voltage: 36 V
- Low thermal resistance package
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Qorvo's T1G2028536-FS is a 285 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2 GHz.
The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.
Typical Applications
- Avionics
- Civilian Radar
- GPS
- Military Radar
- Professional and Military Radio
- Test Instrumentation
- Wideband and Narrowband Amplifiers
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 2,000 |
| Gain(dB) | 19 |
| Psat(dBm) | 54.2 |
| Drain Efficiency(%) | 54 |
| Vd(V) | 36 to 50 |
| Idq(mA) | 576 |
| Package Type | NI-780 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.
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