QPD2796
2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor
Discontinued >
End of Life announced June 15, 2021 (PCN 21-0130).
Last Time Buy: December 25, 2021
Contact your local sales representative for assistance.
Key Features
- Frequency range: 2.5-2.7GHz
- Drain voltage: 48V
- Output power (P3dB): 200W
- Maximum drain efficiency: 72%
- Efficiency-Tuned P3dB gain: 20dB
Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor.
The QPD2796 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.
QPD2796 can deliver PSAT of 200 W at 48 V operation.
Lead-free and ROHS compliant
Typical Applications
- Active Antennas
- Micro Cell Base Station
- Macro Cell Base Station
- Wireless Communications