QPD1025
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
Key Features
- Frequency Range: .96 to 1.215 GHz
- Output Power (P3dB1): 1862 Watt
- Linear Gain: 22.5 dB
- Typical PAE3dB1: 77.2 %
- Operating voltage: 65 V
- CW and Pulse capable
Note1: @ 1.0GHz Load Pull
The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and test instrumentation. The device can support both CW and pulsed operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
For additional information on GaN thermal performance refer to the following application note and video.
Typical Applications
- IFF Transponders
- Avionics
Product Categories
Application Categories
| Frequency Min(MHz) | 960 |
| Frequency Max(MHz) | 1,215 |
| Gain(dB) | 22.5 |
| Psat(dBm) | 62.7 |
| PAE(%) | 77.2 |
| Vd(V) | 65 |
| Idq(mA) | 1,500 |
| Package Type | NI-1230 (Earless) |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |