QPD1008
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor
Key Features
- Frequency range: DC - 3.2 GHz
- Output power (P3dB): 162 W at 2 GHz
- Linear gain: > 17 dB typical at 2 GHz
- Typical PAE3dB: > 70 % at 2 GHz
- Operating voltage: 50V
- Low thermal resistance package
Qorvo's QPD1008 is a 125 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 3.2 GHz and a 50V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications, avionics, and test instrumentation. The device can support pulsed, CW, and linear operations.
Lead-free and ROHS compliant.
Evaluation boards are available upon request.
Typical Applications
- Avionics
- Civilian Radar
- Jammers
- Military Radar
- Wideband Amplifiers or Narrowband Amplifiers
- Professional and Military Radio Communications
- Test Instrumentation
Product Categories
Application Categories
| Frequency Min(MHz) | DC |
| Frequency Max(MHz) | 3,200 |
| Gain(dB) | > 17 |
| Psat(dBm) | 52 |
| PAE(%) | 70 |
| Vd(V) | 50 |
| Idq(mA) | 260 |
| Package Type | NI-360 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | EAR99 |
Modelithics® Qorvo GaN Library
A Modelithics non-linear model is available for this product.
Qorvo and Modelithics have partnered to provide designers with high-accuracy nonlinear simulation models for Qorvo GaN transistor devices. This model library integrates seamlessly with the latest electronic design automation (EDA) simulation tools, and is thoroughly documented with a model information data sheet for each model. Learn more.