Data sheet available upon request.
End of Life announced August 3, 2023 (PCN 23-0105).
Last Time Buy: February 17, 2024
Recommended replacement for new designs: QPB3810
Contact your local sales representative for assistance.
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The QPD0010 is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 2.5 to 2.7 GHz. In each path is a single-stage amplifier transistor. QPD0010 can deliver an average power of 15 W in a Doherty configuration.
Lead free and RoHS compliant.
Frequency Min(MHz) | 2,500 |
Frequency Max(MHz) | 2,700 |
Gain(dB) | 15 |
Psat(dBm) | 50.5 |
Drain Efficiency(%) | 55 |
Vd(V) | 48 |
Idq(mA) | 65 |
Package Type | DFN |
Package(mm) | 7.0 x 6.5 |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes |
ITAR Restricted | No |
ECCN | EAR99 |