QPA3055P

100 Watt S-Band GaN Power Amplifier

Key Features

  • Frequency Range: 2.9 – 3.5 GHz
  • PSAT (PIN=25 dBm): 50 dBm
  • PAE (PIN=25 dBm): > 53 %
  • Power Gain (PIN=25 dBm): 25 dB
  • Bias: VD = 30 V, IDQ = 300/1500 mA, VG = −2.5 V typical
  • Characterized at PW = 15 ms, DC = 30%, and PW = 100 us, DC = 10%

Qorvo’s QPA3055P is a packaged, high-power S-band amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process (QGaN25). Covering 2.9 – 3.5 GHz, the QPA3055P provides 100 W of saturated output power and 25 dB of large-signal gain while achieving 53% power-added efficiency.

The QPA3055P is packaged in a 10-lead 15.2 x 15.2 mm bolt-down package with a Cu base for superior thermal management. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both short and long pulse operations.

Lead-free and RoHS compliant.

Evaluation board available on request.

Typical Applications

    • Radar

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