QPA2215D
27.5 – 31.0 GHz 10 W GaN Power Amplifier
Key Features
- Frequency Range: 27.5 – 31.0 GHz
- PSAT (PIN = 26 dBm): 40.4 dBm
- PAE (PIN = 26 dBm): 22.6 %
- Power Gain (PIN = 26 dBm): 14.4 dB
- Small Signal Gain: 24.8 dB
- IMD3 (POUT = 31 dBm/tone): −26 dBc
- Bias: VD = 20 V, IDQ = 660 mA
- Die Dimensions: 3.99 x 2.69 x 0.05 mm
Qorvo's QPA2215D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 27.5 to 31.0 GHz, it achieves 2.5 W linear power with lower than −25 dBc intermodulation distortion products and 24.8 dB small signal gain. Saturated output power is greater than 40 dBm (10 W) with an associated power-added efficiency of 22.6 %.
QPA2215D is ideally suited to support satellite communications and 5G infrastructure.
To simplify system integration, the QPA2215D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports.
The QPA2215D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Typical Applications
- 5G Infrastructure
- Satellite Communications
Product Categories
Application Categories
| Frequency Min(GHz) | 27.5 |
| Frequency Max(GHz) | 31 |
| Psat(dBm) | 40.4 |
| Gain(dB) | 24.8 |
| PAE(%) | 22.6 |
| Voltage(V) | 20 |
| Current(mA) | 660 |
| Package Type | Bare Die |
| Package(mm) | 3.99 x 2.69 x 0.05 |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
| ITAR Restricted | No |
| ECCN | 3A001.B.2.C |